TITLE

Mechanism of yellow luminescence in GaN

AUTHOR(S)
Suski, T.; Perlin, P.
PUB. DATE
October 1995
SOURCE
Applied Physics Letters;10/9/1995, Vol. 67 Issue 15, p2188
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the pressure characteristics of yellow luminescence in bulk crystals and epitaxial layers of Galium nitride (GaN). Consideration of GaN as the best prospective for optoelectronic devices operating in the blue and ultraviolet range of spectrum; Factors limiting the optical applications of GaN; Elucidation of a mechanism of radiative recombination.
ACCESSION #
4177683

 

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