Mechanism of yellow luminescence in GaN

Suski, T.; Perlin, P.
October 1995
Applied Physics Letters;10/9/1995, Vol. 67 Issue 15, p2188
Academic Journal
Investigates the pressure characteristics of yellow luminescence in bulk crystals and epitaxial layers of Galium nitride (GaN). Consideration of GaN as the best prospective for optoelectronic devices operating in the blue and ultraviolet range of spectrum; Factors limiting the optical applications of GaN; Elucidation of a mechanism of radiative recombination.


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