TITLE

Structure of (001) GaAs surfaces during epitaxial growth by organometallic chemical vapor

AUTHOR(S)
Kamiya, Itaru; Tanaka, H.
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/6/1993, Vol. 63 Issue 23, p3206
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the structure of gallium arsenide surfaces during epitaxial growth by organometallic chemical vapor deposition. Result of the reflectance-difference spectra; Effect of the exposure to trimethylgallium and arsine; Achievement of equilibrium state at the surface.
ACCESSION #
4177644

 

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