TITLE

Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation

AUTHOR(S)
de Souza, J.P.; Sadana, D.K.
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/6/1993, Vol. 63 Issue 23, p3200
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the mechanism for enhancement of electrical activation of silicon in gallium arsenide by aluminum co-implantation. Conditions for the occurrence of maximum enhancement; Presentation of a model the considering gettering of the oxygen; Role of point defects in the determination of silicon activation.
ACCESSION #
4177642

 

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