TITLE

Misfit dislocation nucleation in doped and undoped ZnSe/GaAs

AUTHOR(S)
Kuo, L.H.; Salamanca-Riba, L.
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/6/1993, Vol. 63 Issue 23, p3187
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates an irregular array of interfacial sixty degrees misfit dislocations in doped and undoped zinc selenide films. Impact of sodium and chlorine doping on the thin films; Explanation of the differences in terms of Frank partial dislocations; Determination of the density of threading dislocations.
ACCESSION #
4177641

 

Related Articles

  • Photoluminescence decay measurements of n- and p-type doped ZnSe grown by molecular beam epitaxy. Massa, J.S.; Buller, G.S.; Walker, A.C.; Simpson, J.; Prior, K.A.; Cavenett, B.C. // Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p589 

    Investigates the time-resolved photoluminescence (PL) of n and p-type doped zinc selenide at room temperature. Application of molecular beam epitaxy; Measurement of the PL decay and relaxation time; Indication of the band-edge PL decay time.

  • Incorporation of hydrogen in nitrogen and arsenic doped ZnSe epitaxial layers grown by.... Bourret-Courchesne, Edith D. // Applied Physics Letters;4/22/1996, Vol. 68 Issue 17, p2418 

    Investigates the incorporation of hydrogen in arsenic and nitrogen doped zinc selenide epitaxial layers grown by organometallic vapor phase epitaxy. Low concentration of hydrogen of arsenic doped samples grown in the nitrogen carrier; Achievement of high concentrations of nitrogen; Reduction of...

  • Pressure dependence of the photoluminescence spectra of nitrogen-doped ZnSe: Evidence of.... Chen, Anthony L.; Walukiewicz, Wladek // Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p1006 

    Measures the photoluminescence spectra of nitrogen-doped ZnSe under hydrostatic pressure. Presence of two donor-acceptor-pair transitions in highly doped samples; Compensation of the deep donor by one mechanism limiting the free hole concentration; Origination of the defect from native defect...

  • Edge Luminescence from Zinc Selenide Doped with Isovalent Magnesium Impurity. Sletov, M. M. // Technical Physics Letters;Jan2001, Vol. 27 Issue 1, p63 

    The electric and luminescent properties of zinc selenide crystals doped with the isovalent magnesium impurity were studied. It is demonstrated that low-resistivity n-type ZnSe layers with a dominating edge luminescence component can be obtained.

  • Compensation introduced by defect complexes in p-type ZnSe. Ren, Tian-Ling; Zhu, Jia-Lin // Journal of Applied Physics;8/1/1999, Vol. 86 Issue 3, p1439 

    Focuses on a study on the compensation mechanism of defect complexes in nitrogen-doped and arsenic-doped zinc selenide by using the discrete-variational local-density-functional method within a cluster model. Methodology of the study; Results and discussion; Conclusions.

  • The influence of impurities on the dislocation behavior in heteroepitaxial ZnSe on GaAs. Kalisetty, S.; Gokhale, M. // Applied Physics Letters;3/18/1996, Vol. 68 Issue 12, p1693 

    Examines the influence of impurities on the dislocation behavior in heteroepitaxial zinc selenide on gallium arsenide. Inverse relationship between layer thickness and dislocation density; Correlation between the normalized dislocation density and the concentration of incorporated chlorine;...

  • Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers. Shahzad, K.; Petruzzello, J.; Olego, D. J.; Cammack, D. A.; Gaines, J. M. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2452 

    We present low-temperature photoluminescence and transmission electron microscopy data to show that two transitions I0V at ∼2.774 eV and Y0 at ∼2.60 eV, frequently observed in unintentionally doped zinc selenide epitaxial layers, are directly related to structural defects. It is shown...

  • Novel technique for p-type nitrogen doped ZnSe epitaxial layers. Taskar, N.R.; Khan, B.A.; Dorman, D.R.; Shahzad, K. // Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p270 

    Presents a technique to obtain p-type zinc selenide layers doped with nitrogen. Ways to enhance nitrogen acceptor activation; Fabrication of p-n junction diodes; Use of p-type layers for light emitting diode applications.

  • Low resistance graded contacts to n-type ZnSe. Lazzarino, M.; Ozzello, T. // Applied Physics Letters;1/15/1996, Vol. 68 Issue 3, p370 

    Investigates the specific resistance of metal contacts to chlorine-doped n-type zinc selenide. Fabrication of Zn[sub 1-x]Cd[sub x]Se ternary layer; Analysis of the Al/Zn[sub 1-x]Cd[sub x]Se Schottky barriers; Implication of the decrease in specific contact resistivity for the grading of the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics