TITLE

Dislocation relaxation in InAs[sub y]P[sub 1-y] films deposited onto (001) InP by gas-source

AUTHOR(S)
Okada, T.; Kruzelecky, R.V.
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/6/1993, Vol. 63 Issue 23, p3194
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines strain relaxation of InAs[sub y]P[sub 1-y] layers grown on indium phosphide substrates by gas-source molecular beam epitaxy. Use of transmission electron microscopy and cathodoluminescence imaging; Variation of arsenic content in the preparation of the film; Exhibition of slip traces.
ACCESSION #
4177640

 

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