Spatially confined nickel disilicide formation at 400 degree C on ion implantation

Erokhin, Yu N.; Hong, F.
December 1993
Applied Physics Letters;12/6/1993, Vol. 63 Issue 23, p3173
Academic Journal
Investigates the localized formation of continuous silicide layers via solid state reaction of nickel atoms with ion implantation preamorphized silicon. Induction of the silicidation reaction by two stage thermal annealing; Parameters determining the characteristics of the silicide films; Determination of silicide resistivity.


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