TITLE

SiO[sub 2] mask erosion and sidewall composition during CH[sub 4]/H[sub 2] reactive ion etching

AUTHOR(S)
Lee, B.-T.; Hayes, T.R.
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/6/1993, Vol. 63 Issue 23, p3170
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines silicon oxide mask erosion during methane reactive ion etching of double heterostructures. Determination of the amount of mesa mask narrowing; Conditions for the deposition of mask residues on the etched sidewall; Result of the auger electron spectroscopic analysis.
ACCESSION #
4177632

 

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