SiO[sub 2] mask erosion and sidewall composition during CH[sub 4]/H[sub 2] reactive ion etching

Lee, B.-T.; Hayes, T.R.
December 1993
Applied Physics Letters;12/6/1993, Vol. 63 Issue 23, p3170
Academic Journal
Examines silicon oxide mask erosion during methane reactive ion etching of double heterostructures. Determination of the amount of mesa mask narrowing; Conditions for the deposition of mask residues on the etched sidewall; Result of the auger electron spectroscopic analysis.


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