TITLE

Investigation of silicon interstitial reactions with insulating films using the silicon wafer

AUTHOR(S)
Tsoukalas, D.; Tsamis, C.
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/6/1993, Vol. 63 Issue 23, p31667
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates silicon interstitial reactions with insulating films using the silicon wafer bonding technique. Generation of silicon interstitial; Utilization of the two different standard silicon implanted with oxygen wafers; Calculation of the diffusivity of the silicon interstitial transport vehicle.
ACCESSION #
4177631

 

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