Formation of high resistivity regions in p-type Al[sub 0.5]In[sub 0.5]P by ion implantation

Zolper, J.C.; Schneider Jr., R.P.
December 1993
Applied Physics Letters;12/6/1993, Vol. 63 Issue 23, p3161
Academic Journal
Investigates the formation of high resistivity regions in magnesium-doped Al[sub 0.5]In[sub 0.5]P. Use of ion implantation technique; Growth and structures of the epilayers; Ineffectivity of hydrogen implantation in compensating holes; Production of sheet resistance by oxygen and argon ions.


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