Transport properties of a silicon single-electron transistor at 4.2 K

Matsuoka, Hideyuki; Kimura, Shin'ichiro
January 1995
Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p613
Academic Journal
Examines the transport properties of silicon single-electron transistor at 4.2 Kelvin. Formation of quantum dot in the inversion layer of metal oxide semiconductor field-effect transistors; Introduction of controllable tunnel barriers in the narrow channel of the transistor; Observation of periodic current oscillations.


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