Surface morphology of metalorganic vapor phase epitaxy grown strained-layer

Hsu, C.C.; Xu, J.B.
January 1995
Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p604
Academic Journal
Examines the surface morphology of metalorganic vapor phase epitaxy grown strained-layer In[sub x]Ga[sub 1-x]As on GaAs with atomic force microscopy. Details on the morphological instability of monolayer steps; Effect of increasing the layer thickness from 5 to 7.5 nanometers; Observation of three-dimensional growth at 650 degrees celsius.


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