Substrate bias effect on the capture kinetics of random telegraph signals in submicron p-channel

Simoen, E.; Claeys, C.
January 1995
Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p598
Academic Journal
Investigates the effect of substrate bias on the capture kinetics of random telegraph signals in submicron silicon p-channel metal-oxide semiconductor transistors. Study of interface-near oxide traps; Dependence of capture time constant on transverse electric field; Details on the carrier transitions between oxide trap and the channel.


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