Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via

Kawarada, H.; Suesada, T.
January 1995
Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p583
Academic Journal
Examines the heteroepitaxial growth of diamond thin films on silicon substrates using silicon carbide (SiC) buffer layers. Steps of epitaxial growth; Use of microwave plasma chemical vapor deposition; Importance of high quality SiC surfaces for oriented diamond nucleation.


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