Reduced effective misfit in laterally limited structures such as epitaxial islands

Christiansen, S.; Albrecht, M.
January 1995
Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p574
Academic Journal
Examines the reduced effective misfit in laterally limited epitaxial islands and mesa structures. Details on the correction function ratio; Comparison between constant and average strain energy density; Influence of islanding on misfit strain distribution of island and substrate.


Related Articles

  • Nucleation and coarsening during epitaxy on a substrate subject to periodic strain: Spatial ordering and size uniformity. Mattsson, Thomas R.; Metiu, Horia // Journal of Chemical Physics;12/8/2000, Vol. 113 Issue 22 

    The diffusion constant of an adsorbed atom changes if the surface is under strain. Because of this, it is reasonable to expect that all diffusion-dependent phenomena occur differently on a strained surface. Here we study how homogeneous, metal-on-metal epitaxy is modified when it takes place on...

  • Strain-induced change in the elastically soft direction of epitaxially grown face-centered-cubic metals. Ozolin¸sˇ, V.; Wolverton, C.; Zunger, Alex // Applied Physics Letters;1/26/1998, Vol. 72 Issue 4, p427 

    The theory of epitaxial strain energy is extended beyond the harmonic approximation to account for large film/substrate lattice mismatch. We find that for fcc noble metals (i) directions [001] and [111] soften under tensile biaxial strain (unlike zincblende semiconductors) while (ii) [110] and...

  • Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si[sub 1-x]Ge[sub x] hut islands. Kubler, L.; Dentel, D.; Bischoff, J. L.; Ghica, C.; Ulhaq-Bouillet, C.; Werckmann, J. // Applied Physics Letters;8/24/1998, Vol. 73 Issue 8 

    Hut cluster formation during Ge or Si[sub 1-x]Ge[sub x] solid source molecular beam epitaxial growth on Si(001) is a well-known kinetic pathway for partial strain relief. It results in undulated morphologies with {105} facets allowing a[sub ||] lattice parameter relaxation on the island apexes....

  • Analysis of epitaxial Ga[sub x]In[sub 1-x]As/InP and Al[sub y]In[sub 1-y]As/InP interface.... Giannini, C.; Tapfer, L.; Tournie, E.; Zhang, Y.H.; Ploog, K.H. // Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p149 

    Examines the strain analysis on single Ga[sub x]In[sub 1-x]As and Al[sub x]In[sub 1-y]As heterostructures grown lattice matched on (001)-indium phosphide substrates by molecular beam epitaxy. Use of high resolution x-ray diffraction; Existence of distinct interface regions; Composition of the...

  • An assessment of the roles of climb and glide in misfit strain relief. Jesser, W. A.; van der Merwe, J. H. // Journal of Applied Physics;1/15/1994, Vol. 75 Issue 2, p872 

    Assesses the relative contributions of glide and climb processes in the relaxation of misfit strain in heteroepitaxial layers. Two problems of efficient misfit accommodation that arise when threading dislocations glide to produce misfit dislocations; Misfit accommodation model; Differences...

  • Elastic accommodation of heteroepitaxial InSb films on GaAs. Rajan, K.; Gong, R.; Webb, J. // Applied Physics Letters;10/1/1990, Vol. 57 Issue 14, p1446 

    Heteroepitaxial films of InSb on GaAs (100) grown by metalorganic magnetron sputtering have been studied by transmission electron microscopy. The elastic strain in the InSb films has been measured using Moiré fringe analysis. Dilational lattice strain was found to decrease with increasing...

  • Low threshold current InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy. Zhang, G.; Nappi, J. // Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p96 

    Examines the low threshold current indium-gallium arsenide/gallium arsenide/gallium-indium phosphide (InGaAs/GaAs/GaInP) lasers grown by gas-source molecular beam epitaxy. Fabrication of InGaAs/GaAs/GaInP lasers with three quantum wells; Advantages of replacing the AlGaAs cladding layers of the...

  • Raman scattering study of strain in Zn[sub x]Cd[sub 1-x]Te/CdTe superlattices. Trofimov, I.E.; Petrov, M.V. // Applied Physics Letters;7/27/1992, Vol. 61 Issue 4, p417 

    Examines the strain configuration in Zn[sub x]Cd[sub 1-x]Te/cadmium telluride superlattices. Application of the Raman effect; Growth of the structures through molecular beam epitaxy; Agreement of the calculated stress-induced shifts with experimental energy shifts.

  • Effect of misfit strain on physical properties of InGaP grown by metalorganic molecular-beam epitaxy. Ozasa, Kazunari; Yuri, Masaaki; Tanaka, Shigehisa; Matsunami, Hiroyuki // Journal of Applied Physics;7/1/1990, Vol. 68 Issue 1, p107 

    Deals with a study which examined the effects of misfit strain on physical properties of heterostructure epilayers grown by metalorganic molecular-beam epitaxy. Observation of elastic accommodation of misfit strain; Methodology of the study; Results and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics