TITLE

Trap-limited interstitial diffusion and enhanced boron clustering in silicon

AUTHOR(S)
Stolk, P.A.; Gossmann, H.-J.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p568
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the use of superlattices doped with boron to detect the diffusion of self-interstitials in silicon. Generation of interstitials in the near-surface region by silicon implantation; Estimation for the concentration of traps; Diffusion of interstitials beyond the trapping length for long annealing times.
ACCESSION #
4177290

 

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