Trap-limited interstitial diffusion and enhanced boron clustering in silicon

Stolk, P.A.; Gossmann, H.-J.
January 1995
Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p568
Academic Journal
Examines the use of superlattices doped with boron to detect the diffusion of self-interstitials in silicon. Generation of interstitials in the near-surface region by silicon implantation; Estimation for the concentration of traps; Diffusion of interstitials beyond the trapping length for long annealing times.


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