TITLE

Theoretical analysis of ultrafast pump-probe experiments in semiconductor amplifiers

AUTHOR(S)
Girndt, A.; Knorr, A.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p550
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a theoretical analysis on the pump-probe experiments in semiconductor amplifiers. Basis on the Maxwell-Semiconductor-Bloch equations; Contribution of carrier heating and spectral hole burning for the physical processes of optical amplifiers; Computation for the resonant electronic polarization.
ACCESSION #
4177284

 

Related Articles

  • Terahertz four-wave mixing in semiconductor optical amplifiers: Experiment and theory. Uskov, A.; Mork, J. // Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p944 

    Analyzes highly nondegenerate four-wave mixing processes in bulk semiconductor optical amplifiers. Comparison of experimental data at detuning frequencies up to 3 THz; Dominance of carrier heating and spectral hole burning in mediating wave mixing; Contributions of the processes to nonlinear...

  • Direct observation of longitudinal spatial hole burning in semiconductor optical amplifiers with injection. Fehr, J.-N.; Dupertuis, M.-A.; Hessler, T. P.; Kappei, L.; Marti, D.; Selbmann, P. E.; Deveaud, B.; Pleumeekers, J. L.; Emery, J.-Y.; Dagens, B. // Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4079 

    Measurements of spontaneous emission from InGaAsP semiconductor optical amplifiers provide information on both the carrier density and temperature. By spatially resolving the light emitted along the active layer of the device, we find evidence of longitudinal spatial hole burning which results...

  • Carrier temperature and spectral holeburning dynamics in InGaAsP quantum well laser amplifiers. Willatzen, M.; Mark, J.; Mork, J.; Seltzer, C.P. // Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p143 

    Examines the carrier temperature and spectral holeburning dynamics in indium gallium arsenic phosphide quantum well laser amplifiers. Transition from pump-induced heating to pump-induced cooling of the carriers; Influence of quantum confinement on band structure; Characterization of the gain...

  • Carrier heating and spectral hole burning in strained-layer quantum-well laser amplifiers at 1.5.... Hall, K.L.; Lenz, G. // Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2512 

    Investigates the carrier heating and spectral hole burning in strained-layer multiple-quantum-well laser amplifiers. Impact of quantum-well carriers on the frequency response of amplifiers; Effect of free-carrier absorption on the thermalization of hot-carrier distribution; Distinction between...

  • Linear and Nonlinear Gain of Sb-Based Quantum-Dot Semiconductor Optical Amplifiers. Al-Nashy, B.; Al-Khursan, Amin H. // Recent Patents on Electrical Engineering;Nov2010, Vol. 3 Issue 3, p232 

    Linear and nonlinear gain spectra are studied in Sb-based quantum-dot (QD) semiconductor optical amplifiers (SOAs). Quantum size, homogenous linewidth and effect of Sb-composition in the QD, wetting and barrier layers are studied also. InSb and InAs0.3Sb0.7 QD-SOAs give enough gain saturation....

  • Analytical Model of Four-Wave Mixing in Semiconductor Optical Amplifier. Kadhim, Sadiq; Hassan, Ali; Yasser, Hassan // Arabian Journal for Science & Engineering (Springer Science & Bu;Jan2014, Vol. 39 Issue 1, p557 

    The four-wave mixing process in pump-probe configuration requires the solutions of propagation equations of the three pulses: pump, probe and conjugate simultaneously. Since the pump power is much larger than the other pulses, this makes the differential equation of pump not coupled with the...

  • Picosecond wavelength conversion using semiconductor optical amplifier integrated with microring resonator notch filter. Razaghi, M.; Gandomkar, M.; Ahmadi, V.; Das, N.; Connelly, M. // Optical & Quantum Electronics;Jun2012, Vol. 44 Issue 3-5, p255 

    In this paper, we analyse the picosecond wavelength conversion using semiconductor optical amplifier (SOA) with a novel technique. For an accurate and precise modelling, all the nonlinear effects that are relevant to picosecond and subpicosecond pulse regime, such as, self-phase modulation,...

  • A technique to study the mechanisms of pressure broadening of spectral holes. Leiger, Kristjan; Kikas, Jaak // Proceedings of the Estonian Academy of Sciences, Physics, Mathem;Dec2002, Vol. 51 Issue 4, p255 

    An experimental procedure to distinguish between the two possible mechanisms (dispersive and diffusive) of pressure broadening of spectral holes in nonisobaric experiments is proposed. The method makes use of nonlinear saturation properties of the hole burning process. The proposed four-step...

  • Room-temperature persistent spectral hole burning in Sm-doped KLaF[sub 4] crystals. Kodama, Nobuhiro; Takahashi, Tomoko; Hirao, Kazuyuki // Applied Physics Letters;3/30/1998, Vol. 72 Issue 13 

    Persistent spectral hole burning is observed at room temperature in the excitation spectrum for the [sup 7]F[sub 0]→[sup 5]D[sub 0] transition of Sm[sup 2+] in KLaF[sub 4] single crystals. The hole width and depth are about 10 cm[sup -1] and 18% of the total intensity, respectively. It is...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics