Uniform and delta doping of carbon in GaAs by solid-source molecular beam epitaxy using electron

Sato, D.L.; Szalkowski, F.J.
April 1995
Applied Physics Letters;4/3/1995, Vol. 66 Issue 14, p1791
Academic Journal
Examines the uniform and delta doping of carbon in gallium arsenide grown by molecular beam epitaxy. Degradation of photoluminescence intensity; Attribution of atomic carbon pairing to the formation of defect on the film surface; Details on the amphoretic properties of carbon.


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