TITLE

Schottky barrier contacts of titanium nitride on n-type silicon

AUTHOR(S)
Dimitriadis, C.A.; Logothetidis, S.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/23/1995, Vol. 66 Issue 4, p502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the fabrication of Schottky contacts of titanium nitride (TIN[sub x]) thin films on n-type silicon (Si). Use of spectroscopic ellipsometry to determine the stoichiometry of TIN[sub x] films; Deposition of TIN[sub x] thin films on Si wafer; Effects of low bias voltage on Schottky diodes.
ACCESSION #
4177074

 

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