Measurement of adsorbed F atoms on a HF treated Si surface using infrared reflection absorption

Yamada, Yoshiyasu; Hattori, Tadashi
January 1995
Applied Physics Letters;1/23/1995, Vol. 66 Issue 4, p496
Academic Journal
Investigates the measurement of fluorine (F) atoms adsorbed on hydrogen fluoride (HF) treated silicon (Si). Observation on the infrared spectrum of Si wafer; Effects of water treatment on the amount of F in Si; Formation of Si-F[sub 2] bond from F atoms.


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