Surfactants in Si(111) homoepitaxy

Hoegen, M. Horn-von; Falta, J.
January 1995
Applied Physics Letters;1/23/1995, Vol. 66 Issue 4, p487
Academic Journal
Investigates the crystalline quality of surfactant mediated grown homoepitaxial silicon (Si) films on Si. Dependence of site exchange between Si and adsorbate on binding energy; Effects of bound adsorbate on growth inhibition; Formation of bulk defects in the film during Si growth.


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