TITLE

New encapsulant source for III--V quantum well disordering

AUTHOR(S)
Rao, E.V.K.; Hamoudi, A.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/23/1995, Vol. 66 Issue 4, p472
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates phosphorous in silicon dioxide encapsulants. Application of phosphorus as carrier free disordering sources of III-V quantum well structures; Role of the encapsulant source in inducing reproducible disorder on Group III; Impact of encapsulants on III-V optoelectronic devices.
ACCESSION #
4177064

 

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