Anti-phase direct bonding and its application to the fabrication of InP-based 1.55 mum

Okuno, Y.; Uomi, K.
January 1995
Applied Physics Letters;1/23/1995, Vol. 66 Issue 4, p451
Academic Journal
Examines the application of anti-phase direct bonding to the fabrication of wavelength lasers on GaAs substrates. Bond of InP and GaAs wafers at the atomic level; Equivalence in performance between lasers in anti-phase direct bonding and in-phase direct bonding; Importance of anti-phase direct bonding to integrate various devices.


Related Articles

  • X-ray Diffraction Study of Changes in the CdTe Monocrystal Real Structure Induced by Laser Radiation. Shul�pina, I. L.; Ratnikov, V. V.; Matveev, O. A. // Physics of the Solid State;Mar2001, Vol. 43 Issue 3, p579 

    The changes in the real structure of CdTe monocrystals caused by the thermal action of a highpower laser pulse (1.6-1.97 J/cm�) were studied by high-resolution x-ray topography and diffractometry methods. It was shown that, under our experimental conditions, in a thin surface layer within...

  • Generation and Accumulation of Dislocations on the Silicon Surface under the Action of Pulse�Periodic Emission from a YAG : Nd Laser. Banishev, A. F.; Golubev, V. S.; Kremnev, A. Yu. // Technical Physics;Aug2001, Vol. 46 Issue 8, p962 

    Solid-phase damage of the silicon surface due to the generation and accumulation of dislocations is studied. The dislocations are generated under the pulse-periodic action of a-YAG : Nd laser. The number of laser pulses that causes surface damage vs. power density and pulse repetition period is...

  • Effect of Magnetic Field on the Microplastic Strain Rate for C[sub 60] Single Crystals. Smirnov, B. I.; Shpeızman, V. V.; Peschanskaya, N. N.; Nikolaev, R. K. // Physics of the Solid State;Oct2002, Vol. 44 Issue 10, p2009 

    Microplastic deformation in a magnetic field and in a zero field, as well as after preliminary action of a magnetic field on C[sub 60] crystals, is studied with the help of a laser interferometer, which makes it possible to measure the strain rate on the basis of linear displacements of 0.15...

  • Reverse-bias electroluminescence imaging to diagnose failures of vertical-cavity surface-emitting lasers. McElfresh, D. K.; Vacar, D. // Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p221108 

    The charge flowing through the junction of vertical-cavity surface-emitting lasers (VCSELs) under reverse-bias gives rise to electroluminescence (EL) when breakdown conditions are satisfied. We collected the reverse-bias EL of VCSEL devices that had been subjected to accelerated stress. We...

  • Nitride based laser diodes on substrates with patterned AlN mask. Sarzynski, Marcin; Krysko, Marcin; Targowski, Grzegorz; Kamler, Grzegorz; Domagała, Jarosław; Czernecki, Robert; Libura, Adam; Perlin, Piotr; Leszczynski, Michał // Applied Physics Letters;11/26/2007, Vol. 91 Issue 22, p221103 

    We report on electrical and optical properties of InGaN violet laser diodes, grown on high-pressure grown, almost dislocation free GaN substrates. In these structures, mechanical strain has been reduced by a partially relaxed AlN mask with stripe shaped windows. The dislocation density of the...

  • Dislocation injection in strontium titanate by femtosecond laser pulses. Titus, Michael S.; Echlin, McLean P.; Gumbsch, Peter; Pollock, Tresa M. // Journal of Applied Physics;8/21/2015, Vol. 118 Issue 7, p075901-1 

    Femtosecond laser ablation is used in applications which require low damage surface treatments, such as serial sectioning, spectroscopy, and micromachining. However, dislocations are generated by femtosecond laser-induced shockwaves and consequently have been studied in strontium titanate (STO)...

  • Formation of epitaxial and textured platinum films on ceramics-(100) MgO single crystals by.... Narayan, J.; Tiwari, P. // Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2093 

    Investigates the formation of epitaxial and textured platinum films on magnesium oxide single crystals by pulsed laser deposition. Growth of lattice misfit; Determination of ion scattering as a function of backscattering ion energy; Reduction in the temperature of epitaxial growth.

  • 384 nm laser diode grown on a [formula] semipolar relaxed AlGaN buffer layer. Haeger, Daniel A.; Young, Erin C.; Chung, Roy B.; Wu, Feng; Pfaff, Nathan A.; Tsai, Min; Fujito, Kenji; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji; Cohen, Daniel A. // Applied Physics Letters;4/16/2012, Vol. 100 Issue 16, p161107 

    We demonstrate an electrically injected semipolar (20[formula]1) laser diode grown on a partially relaxed AlGaN buffer layer. The coherency stresses are relaxed by misfit dislocations at the GaN/AlGaN heterointerface which form by glide of preexisting threading dislocations along the (0001)...

  • Features of a shock wave in CdTe by pulsed laser irradiation. Dauletmuratov, B. K. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2011, Vol. 14 Issue 1, p130 

    Analyzed on the example of CdTe are formation and propagation of shock waves during pulsed laser irradiation of a solid surface. It is shown that before the appearance of a shock wave in a solid, a gradual increase in pressure gradient leads to formation of dislocations, density of which...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics