TITLE

Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy

AUTHOR(S)
Theiss, Silva K.; Chen, D.M.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/23/1995, Vol. 66 Issue 4, p448
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines lattice relaxation of germanium (Ge) islands on silicon (111) measured by scanning tunneling microscopy (STM). Increase in the level of relaxation in Ge islands; Observation of lattice spacing on several islands below the GE lattice constant; Effects of height-to-width aspect ratio on elastic relaxation.
ACCESSION #
4177056

 

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