Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy

Theiss, Silva K.; Chen, D.M.
January 1995
Applied Physics Letters;1/23/1995, Vol. 66 Issue 4, p448
Academic Journal
Examines lattice relaxation of germanium (Ge) islands on silicon (111) measured by scanning tunneling microscopy (STM). Increase in the level of relaxation in Ge islands; Observation of lattice spacing on several islands below the GE lattice constant; Effects of height-to-width aspect ratio on elastic relaxation.


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