Photoluminescence and electroluminescence of SiGe dots fabricated by island growth

Apetz, R.; Vescan, L.
January 1995
Applied Physics Letters;1/23/1995, Vol. 66 Issue 4, p445
Academic Journal
Examines photo- and electroluminescence of SiGe dots fabricated by Stranski-Krastanov growth mode. Influence of dot size on peak position; Dependence of integrated electroluminescence intensity on forward current; Comparison between SiGe island growth and SiGe layers on luminescence intensities.


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