TITLE

Fullerene formation during production of chemical vapor deposited diamond

AUTHOR(S)
Lee Chow; Hao Wang
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/23/1995, Vol. 66 Issue 4, p430
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines fullerene formation during diamond synthesis via hot filament chemical vapor deposition procedure. Relevance of hydrocarbon species as fullerene precursors; Importance of atomic hydrogen to form all-carbon fullerene; Role of fullerene on foreign substrates.
ACCESSION #
4177050

 

Related Articles

  • Investigation of the Tribological Properties of Diamond Films. Jones, A. N.; Ahmed, W.; Rego, C. A.; Taylor, H.; Beake, B. D.; Jackson, M. J. // Journal of Materials Engineering & Performance;Feb2007, Vol. 16 Issue 1, p131 

    A chemical vapor deposition (CVD) system has been used to produce polycrystalline and nanocrystalline diamond (NCD) films. For biomedical and electronic engineering applications, it is highly desirable to deposit smooth films with decreased crystal size. In general, diamond coatings with a...

  • Effects of filament and reactor wall materials in low-pressure chemical vapor deposition synthesis of diamond. Singh, B.; Arie, Y.; Levine, A. W.; Mesker, O. R. // Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p451 

    Well-faceted diamond crystals and polycrystalline films have been produced by low-pressure, hot-filament-activated, chemical vapor deposition with the use of methane/ hydrogen gas. The effects on growth and morphology of varying filament and reactor tube materials as well as tube diameter are...

  • Increased deposition rate of chemically vapor deposited diamond in a direct-current arcjet with.... Baldwin Jr., S.K.; Owano, T.G. // Applied Physics Letters;7/10/1995, Vol. 67 Issue 2, p194 

    Investigates the deposition rate of chemically vapor deposited diamond in a direct-current arcjet with a secondary discharge. Induction of the secondary discharge by means of a positive potential on the deposition surface; Ways of increasing radical concentration at the growth surface; Effect...

  • Stable anionic site on hydrogenated (111) surface of diamond resulting from hydrogen atom removal under chemical vapor deposition conditions. Komatsu, Shojiro // Journal of Applied Physics;9/15/1996, Vol. 80 Issue 6, p3319 

    Focuses on a study which investigated the stability of a deprotonated site on the hydrogenated surface of diamond under chemical vapor deposition (CVD) conditions by using ab initio and semiempirical molecular orbital methods. Role of CVD methods in material science and engineering; Methodology...

  • Scaleable stagnation-flow reactors for uniform materials deposition: Application to combustion.... McCarty, K.F.; Meeks, E. // Applied Physics Letters;9/13/1993, Vol. 63 Issue 11, p1498 

    Examines the application of stagnation-flow geometry to the chemical vapor deposition of diamond. Comparison between the coflow and trumpet-bell designs; Use of trumpet-bell design to grow uniform diamond films from substrate-stabilized flat flame; Consideration of stagnation flow for...

  • Evidence of the role of positive bias in diamond growth by hot filament chemical vapor deposition. Cui, Jingbiao; Fang, Rongchuan // Applied Physics Letters;12/2/1996, Vol. 69 Issue 23, p3507 

    Diamond films have been deposited on a positively biased silicon substrate by hot filament chemical vapor deposition. It is found that the size distribution of the diamond particle is uniform under bias conditions. The effects of the bias on reactive gas composition were investigated by in situ...

  • Microstructure and its effect on field electron emission of grain-size-controlled nanocrystalline diamond films. Wu, Kehui; Wang[a], E. G.; Cao, Z. X.; Wang, Z. L.; Jiang, X. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2967 

    Presents a systematic study on the synthesis and field electron emission characterization of nanocrystalline diamond films grown by microwave enhanced chemical vapor deposition using N[sub 2]/Ch[sub 4] as precursors. Effects of the growth parameters on the film microstructure; Formation...

  • Low-temperature diamond growth in a microwave discharge. Hsu, W. L.; Tung, D. M.; Fuchs, E. A.; McCarty, K. F.; Joshi, A.; Nimmagadda, R. // Applied Physics Letters;12/25/1989, Vol. 55 Issue 26, p2739 

    A new regime for plasma-assisted chemical vapor deposition (CVD) of diamond is reported in which high quality diamond films can be deposited on silicon with relatively high ratios of methane in hydrogen mixtures and at significantly lower substrate temperatures than previously reported. The...

  • Experimental and calculational study on diamond growth by an advanced hot filament chemical vapor deposition method. Kondoh, Eiichi; Ohta, Tomohiro; Mitomo, Tohru; Ohtsuka, Kennich // Journal of Applied Physics;7/15/1992, Vol. 72 Issue 2, p705 

    Presents a study which experimentally examined and calculated diamond growth by an advanced hot filament chemical vapor deposition method. Experimental details; Results and discussion; Conclusion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics