TITLE

Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor

AUTHOR(S)
Tsai, W.C.; Chang, C.Y.
PUB. DATE
August 1995
SOURCE
Applied Physics Letters;8/21/1995, Vol. 67 Issue 8, p1092
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the interfacial abruptness of silicon/silicon-germanium (Si/SiGe) semiconductor heterojunction grown by ultrahigh vacuum chemical vapor deposition (UHV/CVD). Composition of germanium in Si/SiGe quantum well; Calculation of thickness and time of the transition region; Impact of hydrogen desorption on the efficacy of UHV/CVD.
ACCESSION #
4170557

 

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