TITLE

Atomic-scale planarization of SiO[sub 2]/Si(001) interfaces

AUTHOR(S)
Niwa, Masaaki; Udagawa, Masaharu
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p675
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the atomic-scale planarization of silicon oxide interfaces in ultrahigh vacuum (UHV) surface. Distinction between conventional interface and UHV surface planarization; Use of chemical vapor deposition in depositing the polysilicon cap layer; Utilization of the atomic force microscopy in studying surface morphology following native oxide growth.
ACCESSION #
4170336

 

Related Articles

  • Decomposition of SiN interlayer during thermal annealing of HfAlOx/SiN/Si(001) structure. Kundu, Manisha; Miyata, Noriyuki; Morita, Yukinori; Horikawa, Tsuyoshi; Nabatame, Toshihide; Ichikawa, Masakazu; Toriumi, Akira // Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5326 

    We investigated the effects of postdeposition annealing (PDA) on a 3.1-nm-HfA1Ox/0.45-nm-SiN/Si(001) structure under ultrahigh vacuum conditions. PDA caused the SiN interlayer (IL) to decompose, which was followed by N incorporation into the HfA1Ox film. A detailed assessment of temperature and...

  • Simultaneous occurrence of multiphases in the interfacial reactions of ultrahigh vacuum.... Hsieh, W.Y.; Lin, J.H.; Chen, L.J. // Applied Physics Letters;3/8/1993, Vol. 62 Issue 10, p1088 

    Investigates the simultaneous occurrence of multiphases in the interfacial reactions of ultrahigh vacuum deposited halfnium (Hf) and chromium thin films. Use of phosphorus doped oriented silicon wafers in the study; Determination of Hf silicon phase from diffraction patterns; Effect of...

  • Interfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures. Liang, J. M.; Chen, L. J. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p4072 

    Presents a study which investigated interfacial reactions and thermal stability of ultrahigh deposited multilayered molybdenum/silicon structures. Use of high resolution transmission electron microscopy in conjunction with fast Fourier transform and correlation function analysis; Experimental...

  • Ultra-high vacuum investigations of atomic layers at low temperatures.  // Low Temperature Physics;Feb98, Vol. 24 Issue 2, p134 

    Examines the ultrahigh vacuum investigations of atomic layers at low temperatures. Difference of monolayer behaviors in different substrates; Use of surface science techniques in the process; Discussion of achievements in the ultra-high vacuum techniques.

  • Simultaneous occurrence of multiphases in interfacial reactions of ultrahigh vacuum deposited Ti.... Wang, M.H.; Chen, L.J. // Applied Physics Letters;11/4/1991, Vol. 59 Issue 19, p2460 

    Examines the interfacial reactions in ultrahigh vacuum deposited titanium thin films on (111) silicon. Application of high resolution transmission electron microscopy and optical diffractometry; Formation of an amorphous interlayer; Modification of the silicide formation theory in thin-film...

  • Correlation between midgap interface state density and thickness-averaged oxide stress and strain at Si/SiO2 interfaces formed by thermal oxidation of Si. Bjorkman, C. H.; Fitch, J. T.; Lucovsky, G. // Applied Physics Letters;5/14/1990, Vol. 56 Issue 20, p1983 

    Correlations between midgap interface state density (Dit) and thickness-averaged stress in thermally grown SiO2 thin films have been investigated by infrared spectroscopy, an optical beam deflection technique, and capacitance-voltage measurements. We find no correlations between Dit and either...

  • Structurally relaxed models of the Si(001)-SiO[sub 2] interface. Pasquarello, Alfredo; Hybertsen, Mark S. // Applied Physics Letters;1/29/1996, Vol. 68 Issue 5, p625 

    Evaluates the structural properties of the silicon (Si) (001)-silicon dioxide interface. Attachment of tridymite to Si(001); Study on the bond length and bond angle distribution in the interface; Absence of electronic states in the silicon gap.

  • Thick-film technology for ultra high vacuum interfaces of micro-structured traps. Kaufmann, D.; Collath, T.; Baig, M.; Kaufmann, P.; Asenwar, E.; Johanning, M.; Wunderlich, C. // Applied Physics B: Lasers & Optics;Jun2012, Vol. 107 Issue 4, p935 

    We adopt thick-film technology to produce ultra high vacuum compatible interfaces for electrical signals. These interfaces permit voltages of hundreds of volts and currents of several amperes and allow for very compact vacuum setups, useful in quantum optics in general, and in particular for...

  • A new variable temperature solution-solid interface scanning tunneling microscope. Jahanbekam, Abdolreza; Mazur, Ursula; Hipps, K. W. // Review of Scientific Instruments;2014, Vol. 85 Issue 10, p1 

    We present a new solution-solid (SS) interface scanning tunneling microscope design that enables imaging at high temperatures with low thermal drift and with volatile solvents. In this new design, distinct from the conventional designs, the entire microscope is surrounded in a...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics