Atomic-scale planarization of SiO[sub 2]/Si(001) interfaces

Niwa, Masaaki; Udagawa, Masaharu
August 1993
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p675
Academic Journal
Examines the atomic-scale planarization of silicon oxide interfaces in ultrahigh vacuum (UHV) surface. Distinction between conventional interface and UHV surface planarization; Use of chemical vapor deposition in depositing the polysilicon cap layer; Utilization of the atomic force microscopy in studying surface morphology following native oxide growth.


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