TITLE

Nitrogen doping in AlGaP grown by metalorganic vapor phase epitaxy using ammonia

AUTHOR(S)
Adomi, K.; Noto, N.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p663
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the use of ammonia for nitrogen doping in aluminum gallium phosphide (AlGaP) metalorganic vapor phase epitaxy. Efficiency of nitrogen as an isoelectric trap in gallium phosphide; Need to improve quantum efficiency for the fabrication of AlGaP based light emitting devices; Use of secondary ion mass concentration in measuring nitrogen concentration.
ACCESSION #
4170332

 

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