Nitrogen doping in AlGaP grown by metalorganic vapor phase epitaxy using ammonia

Adomi, K.; Noto, N.
August 1993
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p663
Academic Journal
Investigates the use of ammonia for nitrogen doping in aluminum gallium phosphide (AlGaP) metalorganic vapor phase epitaxy. Efficiency of nitrogen as an isoelectric trap in gallium phosphide; Need to improve quantum efficiency for the fabrication of AlGaP based light emitting devices; Use of secondary ion mass concentration in measuring nitrogen concentration.


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