TITLE

Electron transport properties of Si/SiGe heterostructures: Measurements and device implications

AUTHOR(S)
Ismail, K.; Nelson, S.F.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p660
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the significance of the electron transport properties of silicon (Si) and silicon germinide (SiGe) heterostructures. Occurrence of biaxial tensile strain following the growth of Si on relaxed SiGe; Influence of sheet resistance reduction on Si and SiGe structures; Effects of electron transport on the use of thin spaces in transistor application.
ACCESSION #
4170331

 

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