Electron transport properties of Si/SiGe heterostructures: Measurements and device implications

Ismail, K.; Nelson, S.F.
August 1993
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p660
Academic Journal
Examines the significance of the electron transport properties of silicon (Si) and silicon germinide (SiGe) heterostructures. Occurrence of biaxial tensile strain following the growth of Si on relaxed SiGe; Influence of sheet resistance reduction on Si and SiGe structures; Effects of electron transport on the use of thin spaces in transistor application.


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