TITLE

Improved Al/InP Schottky barriers by coimplantation of Be/P

AUTHOR(S)
Tyagi, Ritu; Chow, T.P.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p651
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the use of beryllium (Be) and phosphorus coimplantations in improving aluminum and indium phosphide (InP) Schottky barriers. Effects of surface fermi-level pinning on InP barrier height; Demonstration of elevated temperature implantation in enhancing the level of Be activation; Efficiency of surface field tailoring in controlling barrier height.
ACCESSION #
4170328

 

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