Improved Al/InP Schottky barriers by coimplantation of Be/P

Tyagi, Ritu; Chow, T.P.
August 1993
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p651
Academic Journal
Analyzes the use of beryllium (Be) and phosphorus coimplantations in improving aluminum and indium phosphide (InP) Schottky barriers. Effects of surface fermi-level pinning on InP barrier height; Demonstration of elevated temperature implantation in enhancing the level of Be activation; Efficiency of surface field tailoring in controlling barrier height.


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