Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities

Grossmann, H.-J.; Rafferty, C.S.
August 1993
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p639
Academic Journal
Investigates the oxidation enhanced diffusion between silicon boron-doping superlattices and self-interstitial diffusivities. Importance of silicon and dopant interaction in locating point defect behavior; Use of secondary ion mass spectrometry in obtaining depth profiles of dopant atoms; Influence of trapping mechanism on silicon diffusion experiments.


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