Minority-carrier mobility enhancement in p[sup +] InGaAs lattice matched to InP

Harmon, E.S.; Lovejoy, M.L.
August 1993
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p636
Academic Journal
Examines the minority-carrier mobility enhancement of indium gallium arsenide (InGaAs) lattice. Use of InGaAs materials in matching heterojunction bipolar transistor structure lattice and indium phosphide substrates; Accounts on several sources of errors resulting in mobility measurement uncertainties; Influence of plasmon scattering on electron mobility.


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