TITLE

Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy

AUTHOR(S)
Qian, L.Q.; Wessels, B.W.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p628
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the use of metalorganic vapor phase epitaxy for indium (In) and gallium antimonide (GaSb) quantum well structures. Accounts of several source materials employed in the atmospheric pressure metal-organic vapor phase epitaxy; Impact of crystal growth on In and GaSb lattices; Effects of quantum well carrier confinement on photoluminescence emission.
ACCESSION #
4170320

 

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