TITLE

Evidence for structural similarities between chemical vapor deposited and neutron irradiated

AUTHOR(S)
Devine, R.A.B.; Marchand, M.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p619
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the similarities between chemical vapor deposited (CVD) and neutron irradiated (NI) silicon dioxide. Accounts of several industrial applications of silicon dioxide; Utilization of silicon wafers as substrates in Raman measurements; Effects of CVD and NI on membrane ring density and free volume.
ACCESSION #
4170317

 

Related Articles

  • Improvement of the dosimetric properties of chemical-vapor-deposited diamond films by neutron irradiation. Bruzzi, Mara; Menichelli, David; Pini, Silvia; Bucciolini, Marta; Mo´lnar, Jo´zsef; Fenyvesi, Andra´s // Applied Physics Letters;7/8/2002, Vol. 81 Issue 2, p298 

    The performance of chemical-vapor-deposited (CVD) diamond films as on-line dosimeters has been substantially improved after irradiation with fast neutrons up to a fluence of 5 × 10[sup 14] n/cm². This is correlated to a decrease of more than one order of magnitude in the concentration of...

  • Low-temperature chemical vapor deposition of SiO2 at 2–10 Torr. Bennett, B. R.; Lorenzo, J. P.; Vaccaro, K. // Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p197 

    We discuss a new low-pressure and low-temperature process for the chemical vapor deposition (CVD) of silicon dioxide. The process differs from conventional low-pressure CVD in that lower temperatures (150–300 °C) and a unique pressure window (2–10 Torr) provide the conditions...

  • Neutral E’ centers in microwave downstream plasma-enhanced chemical-vapor-deposited silicon dioxide. Warren, W. L.; Lenahan, P. M.; Robinson, B.; Stathis, J. H. // Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p482 

    We have utilized electron spin resonance and capacitance versus voltage measurements to study E’ centers generated by the photoemission of electrons into silicon dioxide films prepared by plasma-enhanced chemical vapor deposition (PECVD). The oxides were deposited on crystalline silicon...

  • Surface localization of the photochemical vapor deposition of SiO[sub 2] on InP at low pressure... Houzay, F.; Moison, J.M.; Sebenne, C.A. // Applied Physics Letters;3/11/1991, Vol. 58 Issue 10, p1071 

    Studies the first stages of the chemical vapor deposition of silicon dioxide on chemically polished InP substrates promoted by ultraviolet illumination and low precursor pressure in an ultrahigh vacuum environment. Similarity of deposited chemical species to those deposited by the thermally...

  • Low pressure chemical vapor deposition of oxide from SiH[sub 4]/O[sub 2]: Chemistry and effects.... Liehr, M.; Cohen, S.A. // Applied Physics Letters;1/13/1992, Vol. 60 Issue 2, p198 

    Analyzes the low pressure chemical vapor deposition (CVD) process of silicon dioxide from SiH[sub 4] and oxygen gas. Dominance of the CVD process by fast gas-phase reactions; Embeddiment of hydroxyl groups into the growing oxide; Effects of hydroxyl groups on the electrical properties of...

  • Characteristics of low-temperature and low-energy plasma-enhanced chemical vapor deposited SiO2. Hsieh, S. W.; Chang, C. Y.; Hsu, S. C. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2638 

    Presents information on a study which obtained the deposition of high quality silicon dioxides at low temperatures by a designed plasma chemical vapor deposition (PECVD) system. Types of PECVD; Deposition process; Deposition mechanisms of PECVD SiO[sub2]; Conclusions.

  • High-fluidity chemical vapor deposition of silicon dioxide. Shin, H.; Miyazaki, S.; Hirose, M. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2616 

    Examines the possibility that the deposition precursors of silicon dioxide could be silanos and siloxanes. Suppression of the thermal reaction on the surface; Reduction of the ion flux onto the growth surface; Planarization of the topography; Formation of the liquefied-precursor on the cooled...

  • Radiation induced carrier enhancement and intrinsic defect transformation in n-GaAs. Jorio, Anouar; Rejeb, Chedly; Parenteau, Martin; Carlone, Cosmo; Khanna, Shyam M. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2310 

    Presents a study which investigated the exposure of gallium arsenide growth by the metallorganic chemical vapor deposition method and n doped with silicon to reactor neutron irradiation. Electrical properties of gallium arsenide semiconductor; Experimental details; Results and discussion;...

  • Temperature dependence of the thermal conductivity of different forms of diamond. Barman, Saswati; Srivastava, G. P. // Journal of Applied Physics;6/15/2007, Vol. 101 Issue 12, p123507 

    We present a systematic theoretical investigation of the thermal conductivity of naturally abundant, isotopically enriched, fast neutron irradiated single crystals of diamond, and chemical vapor deposited diamond films of different types over a large temperature range. Existing experimental data...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics