Two-dimensional hybrid model of inductively coupled plasma sources for etching

Ventzek, Peter L.G.; Sommerer, Timothy J.
August 1993
Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p605
Academic Journal
Investigates the two-dimensional hybrid model for inductively coupled plasma sources employed in etching. Details of the two-dimensional hybrid model; Inclusions of several simulations for radiofrequency discharges; Accounts of the hydrodynamic-chemical kinetics stimulation.


Related Articles

  • Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition. Fang, Z.-Q.; Look, D. C.; Wang, X.-L.; Han, Jung; Khan, F. A.; Adesida, I. // Applied Physics Letters;3/10/2003, Vol. 82 Issue 10, p1562 

    By using deep-level transient spectroscopy (DLTS), deep centers have been characterized in unintentionally doped n-GaN samples grown by metalorganic chemical-vapor deposition and subjected to inductively coupled plasma reactive ion etching. At least six DLTS traps exist in the control sample:...

  • Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes. Miller, M. A.; Crawford, M. H.; Allerman, A. A.; Cross, K. C.; Banas, M. A.; Shul, R. J.; Stevens, J.; Bogart, K. H. A. // Journal of Electronic Materials;Apr2009, Vol. 38 Issue 4, p533 

    Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al xGa1− xN-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and...

  • Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes. Huang, Edward Kwei-wei; Hoffman, Darin; Nguyen, Binh-Minh; Delaunay, Pierre-Yves; Razeghi, Manijeh // Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG 

    Inductively coupled plasma (ICP) dry etching rendered structural and electrical enhancements on type-II antimonide-based superlattices compared to those delineated by electron cyclotron resonance (ECR) with a regenerative chemical wet etch. The surface resistivity of 4×105 Ω cm is...

  • Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors. Kutty, M. N.; Plis, E.; Khoshakhlagh, A.; Myers, S.; Gautam, N.; Smolev, S.; Sharma, Y. D.; Dawson, R.; Krishna, S.; Lee, S. J.; Noh, S. K. // Journal of Electronic Materials;Oct2010, Vol. 39 Issue 10, p2203 

    We report on the comparison of mesa sidewall profiles of InAs/GaSb strained-layer superlattice (SLS) detector structures ( λ ≈ 14 μm at V = 0 V and T = 30 K) obtained after (a) a conventional BCl-based inductively coupled plasma etch, (b) a chemical etch (HO:HCl:HO, 1:1:4), and (c) a...

  • Low-Dimensional Waveguide Grating Fabrication in GaN with Use of SiCl4/Cl2/Ar-Based Inductively Coupled Plasma Dry Etching. Dylewicz, R.; Patela, S.; Hogg, R.; Fry, P.; Parbrook, P.; Airey, R.; Tahraoui, A. // Journal of Electronic Materials;May2009, Vol. 38 Issue 5, p635 

    Optimized fabrication of submicron-sized features in gallium nitride (GaN) with the use of inductively coupled plasma (ICP) dry etching, based on SiCl4/Cl2/Ar gas mixture, is presented. Dense periodic patterns, i.e., 400-nm-period gratings, were transferred into a gallium nitride waveguide under...

  • Nanoscale gap filling for phase change material by pulsed deposition and inductively coupled plasma etching. Ren, W.; Liu, B.; Song, Z.; Jing, X.; Zhang, B.; Xiang, Y.; Xiao, H.; Xu, J.; Wu, G.; Qi, R.; Duan, S.; Yu, Q.; Feng, S. // Applied Physics A: Materials Science & Processing;Sep2013, Vol. 112 Issue 4, p999 

    The gap filling of phase change material has become a critical module in the fabrication process of phase change random access memory (PCRAM) as the device continues to scale down to 45 nm and below. However, conventional physical vapor deposition process cannot meet the nanoscale gap fill...

  • Low dark current long-wave infrared InAs/GaSb superlattice detectors. Nguyen, Jean; Soibel, Alexander; Ting, David Z.-Y.; Hill, Cory J.; Lee, Mike C.; Gunapala, Sarath D. // Applied Physics Letters;8/2/2010, Vol. 97 Issue 5, p051108 

    Surface leakage reduction has been achieved using BCl3/Cl2/CH4/H2/Ar inductively coupled plasma dry etching for pixel isolation of high performance long-wave infrared superlattice detectors. The leakage has been minimized by effectively increasing the surface resistivity by more than 7.4 times...

  • Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness. Pattison, P. Morgan; David, Aurelien; Sharma, Rajat; Weisbuch, Claude; DenBaars, Steven; Nakamura, Shuji // Applied Physics Letters;1/15/2007, Vol. 90 Issue 3, p031111 

    Gallium nitride based microcavity light emitting diodes less than 400 nm thick emitting at a peak wavelength of 455 nm have been fabricated. The epitaxial structure was grown by metal organic chemical vapor deposition, and the device was fabricated using a laser lift-off process. Cavity thinning...

  • Optical properties of GaN nanopillars fabricated using ICPRIE technique. Bhasker, H. P.; Ghosh, P.; Ghosh, A.; Mukherjee, A.; Singh, B. P.; Dhar, S. // AIP Conference Proceedings;6/5/2012, Vol. 1447 Issue 1, p1089 

    Gallium nitride (GaN) nanopillars are fabricated by Inductively Coupled Plasma Reactive Ion etching (ICPRIE) technique without any prior lithographic processing. Nanopillars are found to be highly c-axis oriented with density as high as ≈ 1010 cm-2. The average tip diameter of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics