Kinetics of Si[sub 1-x]Ge[sub x]/Si(0...x...1) growth by molecular beam epitaxy using disilane and

Zhang, F.C.; Singh, J.
July 1995
Applied Physics Letters;7/3/1995, Vol. 67 Issue 1, p85
Academic Journal
Examines the molecular beam epitaxy of Si[sub 1-x]Ge[sub x] alloys using disilane and germanium as sources. Impact of germanium on silicon incorporation rate; Establishment of growth via adatom migration; Use of the reflection high energy electron diffraction in monitoring the growth process.


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