Molecular-beam epitaxial growth of CdTe(112) on Si(112) substrates

de Lyon, T.J.; Rajavel, D.
April 1995
Applied Physics Letters;4/17/1995, Vol. 66 Issue 16, p2119
Academic Journal
Analyzes the impact of molecular-beam epitaxial (MBE) growth on the deposition of cadmium telluride(112) (CdTe(112)) on silicon(112) (Si(112)) substrates. Comparison of epitaxial growth of zinc telluride(112)B and CdTe; Orientation of CdTe(112) epilayer relative to the Si(112) substrate; Proportion of epilayer thickness to threading dislocation.


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