TITLE

Effect of pulse parameters on the deposition rate of hydrogenated amorphous silicon in a

AUTHOR(S)
Anandan, C.; Mukherjee, C.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p85
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports the deposition of hydrogenated amorphous silicon films from 100% silane and disilane gases by a pulsed radio frequency plasma chemical vapor deposition method. Maintenance of a nonzero low power level; Dependence of deposition rate on both the high power level and dwell time; Effect of pulse parameters on the deposition rate of hydrogenated amorphous silicon.
ACCESSION #
4167663

 

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