Doping of p-type shallow junctions using electron beam evaporation of boron layers for

Zagozdzon-Wosik, W.; Pan, D.
January 1995
Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p76
Academic Journal
Examines the use of electron beam evaporation as a low temperature deposition process of boron and boron/amorphous silicon layers as dopant sources in rapid thermal diffusion. Compatibility of the process with the metal-oxide-semiconductor technology; Use of electronic-beam evaporation; Performance of the diffusion processes.


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