TITLE

Doping of p-type shallow junctions using electron beam evaporation of boron layers for

AUTHOR(S)
Zagozdzon-Wosik, W.; Pan, D.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p76
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the use of electron beam evaporation as a low temperature deposition process of boron and boron/amorphous silicon layers as dopant sources in rapid thermal diffusion. Compatibility of the process with the metal-oxide-semiconductor technology; Use of electronic-beam evaporation; Performance of the diffusion processes.
ACCESSION #
4167660

 

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