TITLE

On the mobility of n-channel metal-oxide-semiconductor transistors prepared by low-pressure

AUTHOR(S)
McLarty, P.K.; Misra, V.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p73
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the factors affecting channel mobility of metal-oxide-semiconductor transistor prepared by rapid thermal chemical vapor deposition of silicon dioxide (RTCVD). Comparison between RTCVD and thermal silicon dioxide at various temperatures; Significance of Coulombic scattering; Increase oxide trapping in the RTCVD films.
ACCESSION #
4167659

 

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