Kinetic model of element III segregation during molecular beam epitaxy of III-III -V

Dehaese, O.; Wallart, X.
January 1995
Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p52
Academic Journal
Examines the implication of column III atoms during molecular beam epitaxy segregation of III-III -V semiconductor compounds for nonabrupt interfaces. Analysis on surface composition; Use of a thermodynamical equilibrium model; Account on a kinetic model development; Comparison between indium concentration profiles and thermodynamical equilibrium model.


Related Articles

  • Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy. Anan, Takayoshi; Sugou, Shigeo; Nishi, Kenichi // Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1047 

    Evaluates the improvement of indium phosphide/indium gallium arsenide (InGaAs) heterointerfaces grown by gas source molecular beam epitaxy. Effect of atom substitutions on the reaction of the InGaAs surface under P[sub 2] beam exposure; Proposal on a switching sequence excluding surface gallium...

  • Ballistic-electron-emission microscopy of (100)CoGa/n-type GaAs interfaces grown by molecular.... Liming Tsau; Kuo, T.C.; Wang, K.L. // Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1062 

    Investigates (100)CoGa/n-type gallium arsenide (GaAs) interfaces grown by molecular beam epitaxy. Influence of turn-on voltages on the transmission probabilities for electrons; Comparison of GaAs transmission between the X and L valleys; Correlation between the CoGa band structure and GaAs...

  • Effective barrier height, conduction-band offset, and the influence of p-type delta doping at... Shen, T.-H.; Elliott, M.; Williams, R.H.; Westwood, D. // Applied Physics Letters;2/25/1991, Vol. 58 Issue 8, p842 

    Demonstrates that the effective band discontinuity at an n-isotype heterojunction interface can be significantly modified by introducing p-type delta doping close to the interface during molecular beam epitaxy growth. Case of the indium arsenide-gallium arsenide interface; Band discontinuities...

  • Control of GaAs Schottky barrier height by formation of a thin off-stoichiometric GaAs.... Fujieda, Shinji // Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p288 

    Presents an application of low-temperature gallium arsenide (GaAs) as a thin interface layer in a metal/GaAs Schottky junctions. Influence of surface nonstoichiometry on Schottky barrier heights; Exploration of molecular beam epitaxy growth in a wide range of arsenide pressure; Explanation of...

  • Raman monitoring of semiconductor growth. Wagner, V.; Drews, D.; Esser, N.; Zahn, D. R. T.; Geurts, J.; Richter, W. // Journal of Applied Physics;6/1/1994, Vol. 75 Issue 11, p7330 

    Presents a study which demonstrated that Raman spectroscopy can be used for in situ online monitoring of semiconductor layer growth. Development of an ultra-high-vacuum chamber to suit molecular beam epitaxy growth; Information on the interface chemistry and crystal quality of the growing...

  • Origin and improvement of interface roughness in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy. Chand, Naresh; Chu, S. N. G. // Applied Physics Letters;10/22/1990, Vol. 57 Issue 17, p1796 

    We show that the likely reason of interface roughness of AlxGa1-xAs/GaAs heterostructures is the surface segregation of background impurities present in the AlGaAs layer. The roughness increases with x and is worse for x=1. In our system, Al is considered to be the main source of impurities in...

  • Enhanced growth of CoSi[sub 2] on epitaxial Si[sub 0.7]Ge[sub 0.3] with a sacrificial amorphous Si interlayer. Wu, W. W.; Chiang, T. F.; Cheng, S. L.; Lee, S. W.; Chen, L. J.; Peng, Y. H.; Cheng, H. H. // Applied Physics Letters;7/29/2002, Vol. 81 Issue 5, p820 

    Enhanced growth of CoSi[sub 2] on epitaxial Si[sub 0.7]Ge[sub 0.3] has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and...

  • Electrical properties of low-temperature-growth CaF[sub 2] on Si(111). Cho, C.-C.; Kim, T.S. // Applied Physics Letters;1/20/1992, Vol. 60 Issue 3, p338 

    Examines the growth of low temperature-epitaxial calcium fluoride (CaF[sub 2]) films on silicon using molecular beam epitaxy. Observation of x-ray rocking curves of CaF[sub 2] in CaF[sub 2]/Si samples; Influence of thermal history on CaF[sub 2] capacitor; Predominance of Ca-Si bonds in CaF[sub...

  • Energetics of molecular-beam epitaxy models. Krishnamurthy, Srinivasan; Berding, M. A.; Sher, A.; Chen, A.-B. // Journal of Applied Physics;10/15/1990, Vol. 68 Issue 8, p4020 

    Presents a study which focused on the energetics of molecular beam epitaxy methods by calculating the removal energies of constituent atoms from various unreconstructed semiconductor surfaces. Utilization of the Green's function method; Definition of the surface sublimation energy details;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics