TITLE

Kinetic model of element III segregation during molecular beam epitaxy of III-III -V

AUTHOR(S)
Dehaese, O.; Wallart, X.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p52
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the implication of column III atoms during molecular beam epitaxy segregation of III-III -V semiconductor compounds for nonabrupt interfaces. Analysis on surface composition; Use of a thermodynamical equilibrium model; Account on a kinetic model development; Comparison between indium concentration profiles and thermodynamical equilibrium model.
ACCESSION #
4167651

 

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