Photoluminescence vibrational structure of Si center in chemical-vapor deposited diamond

Gorokhovsky, A.A.; Turukhin, A.V.
January 1995
Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p43
Academic Journal
Examines a photoluminescence spectra from the silicon (Si) impurity center in diamond films grown by chemical vapor deposition techniques. Observation of vibrational structure of the Si center; Measurement of the temperature dependencies of linewidth of the zero phonon line and phonon replica; Discussion on the origins of broadening.


Related Articles

  • Photoluminescence excitation by band-gap optical absorption in chemical vapor deposition diamond films. Robins, Lawrence H.; Tjossem, Paul J. H.; Smyth, Kermit C.; Barnes, P. Yvonne; Farabaugh, Edward N.; Feldman, Albert // Journal of Applied Physics;3/15/1991, Vol. 69 Issue 6, p3702 

    Presents information on a study which obtained photoluminescence excitation spectra at photon energies near the indirect band gap of diamond for diamond films by the filament-assisted chemical vapor deposition method. Methodology of the study; Results and discussion; Conclusions.

  • Effect of diamond film quality on tungsten related photoluminescence peaks. Lal, S.; Liu, S. // Applied Physics Letters;12/22/1997, Vol. 71 Issue 25, p3640 

    Investigates the effect of diamond film quality on tungsten related photoluminescence peaks. Growth of diamond films by arc jet chemical vapor deposition; Determination of the impurity concentration of the films; Designation of a center as a marker for defect concentration.

  • Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy. Kun Liu; Bo Zhang // Applied Physics Letters;5/26/1997, Vol. 70 Issue 21, p2891 

    Examines the growth of boron-doped diamond films on silicon substrate using microwave enhanced chemical vapor deposition method. Determination of the diamond sample electron affinity; Fabrication of the Schottky barrier structure; Dependence of measured capacitance on the alternating current...

  • The origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films. Bergman, L.; McClure, M. T.; Glass, J. T.; Nemanich, R. J. // Journal of Applied Physics;9/1/1994, Vol. 76 Issue 5, p3020 

    Discusses a study which investigated the role of nitrogen doping on the optical spectra of chemical-vapor-deposited diamond films using Raman and various photoluminiscence techniques. Mechanisms that would give rise to the broadband photoluminescence (PL) in the chemical-vapor-deposited diamond...

  • Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via.... Kawarada, H.; Suesada, T. // Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p583 

    Examines the heteroepitaxial growth of diamond thin films on silicon substrates using silicon carbide (SiC) buffer layers. Steps of epitaxial growth; Use of microwave plasma chemical vapor deposition; Importance of high quality SiC surfaces for oriented diamond nucleation.

  • Plasma etched polycrystalline hot-filament chemical vapor deposited diamond thin films and their.... Liaw, B.Y.; Stacy, T. // Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2827 

    Investigates corona discharge plasma etching of hot-filament chemical vapor deposited diamond thin films grown on single crystal silicon substrates. Indication of the high etch rate and roughness measurements; Manifestation of the electrical measurements on etched films; Evaluation of the...

  • Investigation of bias enhanced nucleation of diamond on silicon. Gerber, J.; Sattel, S.; Ehrhardt, H.; Robertson, J.; Wurzinger, P.; Pongratz, P. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p4388 

    Presents a study which examined bias enhanced nucleation of microwave chemical vapor deposited diamond films on silicon. Experimental details; Results; Discussion.

  • Photoluminescence in Si[sub 1-x-y]Ge[sub x]C[sub y] alloys. Lorentzen, J.D.; Loechelt, G.H. // Applied Physics Letters;5/5/1997, Vol. 70 Issue 18, p2353 

    Investigates the photoluminescence from Si[sub x-y]Ge[sub x]C[sub y] films grown epitaxially on silicon (100) by chemical vapor deposition. Effect of the presence of carbon to the photoluminescence lineshape; Correction of the epitaxial strain shifts using standard deformation potential theory;...

  • Effect of gas composition on texture of diamond films. Marinelli, M.; Milani, E. // Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2839 

    Examines the microwave plasma-enhanced chemical vapor deposition of diamond films deposited on single-crystal silicon substrates. Presentation of unconventional gas mixtures for diamond texturing formation; Characterization of diamond films by scanning electron microscopy and x-ray diffraction;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics