TITLE

Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers

AUTHOR(S)
Gendry, M.; Drouot, V.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p40
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures. Difficulty in dislocation glide; Reduction of critical thickness in the presence of surface steps; Implication of dislocation glide for the relaxation process.
ACCESSION #
4167647

 

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