TITLE

Initial stage of aluminum nitride film growth on 6H-silicon carbide by plasma-assisted

AUTHOR(S)
Tanaka, Satoru; Kern, R. Scott
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p37
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the initial stage of aluminum nitride film growth on 6H-SiC(0001) substrates by plasma assisted gas source molecular beam epitaxy. Investigation in terms of growth mode and interface defects; Use of cross sectional high resolution transmission electron microscopy; Observation of islandlike features on the vicinal surface.
ACCESSION #
4167645

 

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