TITLE

Cuspidal pit formation during the growth of Si(sub x)Ge(sub 1) (sub x) strained films

AUTHOR(S)
Chen, K.M.; Jesson, D.E.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p34
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the formation of cuspidal pits during the growth of strained Si[sub x]Ge[sub 1] [sub x] alloy layers at relatively high supersaturation. Link of pit formation with the strain in the alloy layer; Proposal of a heterogeneous formation mechanism; Implications of the mechanism for the growth of sufficiently thick buffer layers.
ACCESSION #
4167644

 

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