TITLE

Effect of hydrogen ion shower doping in polycrystalline silicon thin-film transistors

AUTHOR(S)
Mishima, Y.; Takei, M.
PUB. DATE
January 1995
SOURCE
Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p31
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effect of hydrogen ion shower doping on polycrystalline silicon thin film transistor (p-Si TFT). Introduction of hydrogen atoms to p-Si TFT channel region using the source/drain contact; Dependence of threshold voltage shift and s value on hydrogen content; Existence of Si[sub 3] trap states in the grain boundaries.
ACCESSION #
4167643

 

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