Response to Comment: 'Comment on 'Optical characterization of submonolayer and monolayer InAs

Wang, P.D.; Ledentsov, N.N.
January 1995
Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p112
Academic Journal
Responds to comments on an article regarding optical characterization of submonolayer and monolayer InAs structures grown in a gallium arsenide matrix on (100) and high index surfaces. Optical properties of strongly lattice-mismatched monolayer and submonolayer InAs insertions; Similarity of investigations on photoluminescence spectra of InAs GaAs structures.


Related Articles

  • Luminescence of as-grown and thermally annealed GaAsN/GaAs. Francoeur, S.; Sivaraman, G.; Qiu, Y.; Nikishin, S.; Temkin, H. // Applied Physics Letters;4/13/1998, Vol. 72 Issue 15 

    We report a study of the luminescence properties of coherently strained GaAs[sub 1-x]N[sub x] grown on GaAs by metalorganic molecular beam epitaxy. Well-defined photoluminescence was observed in samples with a nitrogen concentration up to 3%. Samples subjected to thermal anneals, investigated by...

  • Surface passivation of GaAs. Lee, H. H.; Racicot, R. J.; Lee, S. H. // Applied Physics Letters;2/20/1989, Vol. 54 Issue 8, p724 

    We have successfully passivated the surface of n-type (100) GaAs on the basis of P2S5/NH4OH treatment of the surface. A fivefold increase in the photoluminescence (PL) intensity results at room temperature when the surface is passivated and the PL intensity remains the same even after ten...

  • Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed by in situ photoluminescence. Sandroff, C. J.; Turco-Sandroff, F. S.; Florez, L. T.; Harbison, J. P. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p3632 

    Presents a study which used in situ photoluminescence to investigate recombination at (100) gallium arsenide surfaces and gallium arsenide/aluminum gallium arsenide interfaces in a controlled crystal growth environment. Variations in interfacial aluminum gallium arsenide composition; Role of...

  • Surface passivation of GaAs with P2S5-containing solutions. Wang, Yun; Darici, Yesim; Holloway, Paul H. // Journal of Applied Physics;3/15/1992, Vol. 71 Issue 6, p2746 

    Examines the surface chemistry of gallium arsenide (GaAs) passivated wih P[sub2]S[sub5] solutions modified with sulfur and other sulfides. Reason for the interest in surface passivation of GaAs; Measurement of the degree of passivity achieved; Collection of room-temperature photoluminescence data.

  • Comment on 'Optical characterization of submonolayer and monolayer InAs structures grown in a.... Laruelle, F.; Bloch, J.I. // Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p111 

    Comments on an article regarding optical characterization of submonolayer and monolayer of InAs structures grown in a gallium arsenide matrix on (100) and high index surfaces. Optical properties of thin InGaAs alloy layers; Comparison between the linear and circular polarization spectra;...

  • Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen. del Keijser, M.; van Opdorp, C. // Applied Physics Letters;3/18/1991, Vol. 58 Issue 11, p1187 

    Demonstrates an alternative method for the atomic layer epitaxy (ALE) growth of gallium arsenide (GaAs) with TMG and arsine that makes use of a pulse atomic hydrogen source for speeding up surface kinetics. Observation of the decomposing activity of internally generated atomic hydrogen that is...

  • Epitaxial CaF2 on GaAs(100) after ambient transfer with arsenic overlayer. Sinharoy, S.; Lin, Y. F.; Rieger, J. H. // Journal of Applied Physics;2/15/1987, Vol. 61 Issue 4, p1655 

    Demonstrates the usefulness of a low-temperature cleaning technique for the gallium arsenide surface. Reason for the interest of research groups in the epitaxial growth of lattice-matched Ca[subx]Sr[sub1-x]F[sub2] on gallium arsenide and in the formation of epitaxial iGaAs/(Ca,Sr)F[sub2]/GaAs...

  • Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions. Tufts, Bruce J.; Casagrande, Louis G.; Lewis, Nathan S.; Grunthaner, Frank J. // Applied Physics Letters;9/17/1990, Vol. 57 Issue 12, p1242 

    Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near...

  • Mechanisms of atomic layer epitaxy of GaAs. Yu, Ming L. // Journal of Applied Physics;1/15/1993, Vol. 73 Issue 2, p716 

    Presents a study which investigated the surface chemistry of trimethylgallium and diethylgallium chloride on GaAs(100) surfaces as related to the atomic layer epitaxy of gallium arsenide. Introduction to the epitaxial growth of GaAs(100); Computational approach; Findings.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics