Characterization of iron based precipitates in GaAs layers grown by molecular-beam epitaxy

Bench, M.W.; Carter, C.B.
May 1995
Applied Physics Letters;5/1/1995, Vol. 66 Issue 18, p2400
Academic Journal
Characterizes the iron based precipitates in gallium arsenide layers grown by molecular-beam epitaxy. Utilization of transmission electron microscopy in the study; Formation of precipitates in iron codeposited samples; Dependence of the sizes and number densities of the precipitates on the growth method used.


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