TITLE

Comparison of trapping-detrapping properties of mobile charge in alkali contaminated

AUTHOR(S)
Raynaud, C.; Autran, J.L.
PUB. DATE
May 1995
SOURCE
Applied Physics Letters;5/1/1995, Vol. 66 Issue 18, p2340
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the trapping-detrapping properties of alkali mobile ions. Implementation of a thermally stimulated ionic current measurements on aluminum-oxide-silicon carbide capacitors; Detection of two traps at the interface of oxide and silicon carbide; Utilization of a numerical method to calculate the energy distributions of the traps.
ACCESSION #
4167597

 

Related Articles

  • Dynamic charge storage in 6H silicon carbide. Gardner, C.T.; Cooper, J.A. // Applied Physics Letters;9/7/1992, Vol. 61 Issue 10, p1185 

    Details the fabrication of pn-junction storage capacitors in 6H silicon carbide. Dominance of surface generation at the mesa edges in the charge decay; Dependence of storage time on the method of surface passivation; Activation energies exhibited by devices passivated by dry and wet oxidation.

  • Refreshable Decrease In Peak Height Of Ion Beam Induced Transient Current From Silicon Carbide Metal-Oxide-Semiconductor Capacitors. Ohshima, T.; Iwamoto, N.; Onoda, S.; Makino, T.; Deki, M.; Nozaki, S. // AIP Conference Proceedings;6/1/2011, Vol. 1336 Issue 1, p660 

    MOS capacitors were fabricated on an n-type 6H-SiC epitaxial layer, and charge induced in the nMOS capacitors by 15 MeV oxygen ion microbeams was measured using Transient Ion Beam Induced Current (TIBIC). The peak amplitude of TIBIC signals decreases and the fall time increases with increasing...

  • Low-dose n-type nitrogen implants in 4H-SiC. Saks, N. S.; Ryu, S.-H.; Suvorov, A. V. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4958 

    Lightly-doped n-type layers have been fabricated in 4H-SiC by low-dose implantation of nitrogen ions and characterized using the Hall effect. Near-bulk electron mobility is achieved in the implanted layers. Activation rates for the implanted nitrogen ions, energies and densities of the two-level...

  • Residue-free reactive ion etching of beta-SiC in CHF[sub 3]/O[sub 2] with H[sub 2] additive. Steckl, A.J.; Yih, P.H. // Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p1966 

    Examines the residue-free ion etching of beta-silicon carbide in CHF[sub 3]/O[sub 2] with H[sub 2] additive. Correlation between the formation of residues and the sputter deposition of aluminum (Al) particles; Mechanisms responsible for the prevention of residues; Link between the presence of...

  • High-resistance layers in n-type 4H-silicon carbide by hydrogen ion implantation. Nadella, Ravi K.; Capano, M.A. // Applied Physics Letters;2/17/1997, Vol. 70 Issue 7, p886 

    Investigates the effect of hydrogen ion implantation damage on the resistivity of n-type 4 hydrogen (H)-silicon carbide. Properties of silicon carbide; Need for semi-insulating substrates for the fabrication of high-quality electronic devices; Reasons for performing hydrogen implantation.

  • Boron and aluminum implantation in alpha-SiC. Ahmed, S.; Barbero, C.J. // Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p67 

    Reports comparison of experimental implantation profiles in 6 hydrogen alpha-silicon carbide with theoretical results obtained using TRIM profile simulator. Components in the development of a device process technology based on ion implantation; Conformity of the result with that of TRIM...

  • Low-temperature 3C-SiC heteroepitaxial film growth on Si by reactive-ion-beam deposition. Yamada, Hiroshi // Journal of Applied Physics;3/1/1989, Vol. 65 Issue 5, p2084 

    Investigates heteroepitaxial growth of 3C-silicon carbide (SiC) on silicon (Si) (111) and Si (100) by using a low-temperature crystalline film formation method, reactive-ion-beam deposition. Background on 3C-SiC; Method used to control ionized species energy; Growth using Si homoepitaxial and...

  • Ab initio MO studies of neutral and anionic SiC[sub n] clusters (n=2-5). Gomei, Motoki; Kishi, Reiko; Nakajima, Atsushi; Iwata, Suehiro; Kaya, Koji // Journal of Chemical Physics;12/15/1997, Vol. 107 Issue 23, p10051 

    Studies the geometries and energies of neutral and anion silicon carbide clusters. Adiabatic electron affinities; Complexity of the electronic structure of the clusters; Ground states of the neutral and the anion clusters; Bonding character between silicon and carbon.

  • High-temperature ion beam synthesis of cubic SiC. Martin, P.; Daudin, B.; Dupuy, M.; Ermolieff, A.; Olivier, M.; Papon, A. M.; Rolland, G. // Journal of Applied Physics;3/15/1990, Vol. 67 Issue 6, p2908 

    Presents a study which examined the high-temperature ion beam synthesis of cubic silicon carbide (SiC). Properties of SiC; Details of experimental procedures; Description of an alternative method in obtaining SiC.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics