Low-temperature ion-induced epitaxial growth of alpha-FeSi[sub 2] and cubic FeSi[sub 2] in Si

Lin, X.W.; Behar, M.
July 1993
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p105
Academic Journal
Examines the ion-beam-induced epitaxial crystallization of amorphous silicon implanted with iron. Detection of layered structure in ion-irradiated specimen; Relationship of the phase distribution with iron concentration profile; Formation of alpha-iron silicon[sub 2] around the peak of iron profile.


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